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Radical‐Enhanced Charge Transport in Single‐Molecule Phenothiazine Electrical Junctions

We studied the single‐molecule conductance through an acid oxidant triggered phenothiazine (PTZ‐) based radical junction using the mechanically controllable break junction technique. The electrical conductance of the radical state was enhanced by up to 200 times compared to the neutral state, with h... Full description

Journal Title: Angewandte Chemie 09 October 2017, Vol.129(42), pp.13241-13245
Main Author: Liu, Junyang
Other Authors: Zhao, Xiaotao , Al‐Galiby, Qusiy , Huang, Xiaoyan , Zheng, Jueting , Li, Ruihao , Huang, Cancan , Yang, Yang , Shi, Jia , Manrique, David Zsolt , Lambert, Colin J. , Bryce, Martin R. , Hong, Wenjing
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0044-8249 ; E-ISSN: 1521-3757 ; DOI: 10.1002/ange.201707710
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recordid: wj10.1002/ange.201707710
title: Radical‐Enhanced Charge Transport in Single‐Molecule Phenothiazine Electrical Junctions
format: Article
creator:
  • Liu, Junyang
  • Zhao, Xiaotao
  • Al‐Galiby, Qusiy
  • Huang, Xiaoyan
  • Zheng, Jueting
  • Li, Ruihao
  • Huang, Cancan
  • Yang, Yang
  • Shi, Jia
  • Manrique, David Zsolt
  • Lambert, Colin J.
  • Bryce, Martin R.
  • Hong, Wenjing
subjects:
  • Einzelmolekülkontakte
  • Elektrische Leitfähigkeit
  • Ladungstransport
  • Molekulare Elektronik
  • Radikalkationen
ispartof: Angewandte Chemie, 09 October 2017, Vol.129(42), pp.13241-13245
description: We studied the single‐molecule conductance through an acid oxidant triggered phenothiazine (PTZ‐) based radical junction using the mechanically controllable break junction technique. The electrical conductance of the radical state was enhanced by up to 200 times compared to the neutral state, with high stability lasting for at least two months and high junction formation probability at room‐temperature. Theoretical studies revealed that the conductance increase is due to a significant decrease of the HOMO–LUMO gap and also the enhanced transmission close to the HOMO orbital when the radical forms. The large conductance enhancement induced by the formation of the stable PTZ radical molecule will lead to promising applications in single‐molecule electronics and spintronics. von Phenothiazinradikalen wurde mit der mechanisch kontrollierten Bruchkontaktmethode bestimmt. Ausgelöst durch ein saures Oxidationsmittel steigert das Radikalkation des Phenothiazins mit hoher Stabilität und Wahrscheinlichkeit der Kontaktbildung bei Raumtemperatur die Ladungstransporteigenschaft bis auf das 200‐Fache, was vielversprechende Anwendungen in der Einzelmolekülelektronik und Spintronik aufzeigt.
language: eng
source:
identifier: ISSN: 0044-8249 ; E-ISSN: 1521-3757 ; DOI: 10.1002/ange.201707710
fulltext: fulltext
issn:
  • 0044-8249
  • 00448249
  • 1521-3757
  • 15213757
url: Link


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titleRadical‐Enhanced Charge Transport in Single‐Molecule Phenothiazine Electrical Junctions
creatorLiu, Junyang ; Zhao, Xiaotao ; Al‐Galiby, Qusiy ; Huang, Xiaoyan ; Zheng, Jueting ; Li, Ruihao ; Huang, Cancan ; Yang, Yang ; Shi, Jia ; Manrique, David Zsolt ; Lambert, Colin J. ; Bryce, Martin R. ; Hong, Wenjing
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subjectEinzelmolekülkontakte ; Elektrische Leitfähigkeit ; Ladungstransport ; Molekulare Elektronik ; Radikalkationen
descriptionWe studied the single‐molecule conductance through an acid oxidant triggered phenothiazine (PTZ‐) based radical junction using the mechanically controllable break junction technique. The electrical conductance of the radical state was enhanced by up to 200 times compared to the neutral state, with high stability lasting for at least two months and high junction formation probability at room‐temperature. Theoretical studies revealed that the conductance increase is due to a significant decrease of the HOMO–LUMO gap and also the enhanced transmission close to the HOMO orbital when the radical forms. The large conductance enhancement induced by the formation of the stable PTZ radical molecule will lead to promising applications in single‐molecule electronics and spintronics. von Phenothiazinradikalen wurde mit der mechanisch kontrollierten Bruchkontaktmethode bestimmt. Ausgelöst durch ein saures Oxidationsmittel steigert das Radikalkation des Phenothiazins mit hoher Stabilität und Wahrscheinlichkeit der Kontaktbildung bei Raumtemperatur die Ladungstransporteigenschaft bis auf das 200‐Fache, was vielversprechende Anwendungen in der Einzelmolekülelektronik und Spintronik aufzeigt.
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titleRadical‐Enhanced Charge Transport in Single‐Molecule Phenothiazine Electrical Junctions
descriptionWe studied the single‐molecule conductance through an acid oxidant triggered phenothiazine (PTZ‐) based radical junction using the mechanically controllable break junction technique. The electrical conductance of the radical state was enhanced by up to 200 times compared to the neutral state, with high stability lasting for at least two months and high junction formation probability at room‐temperature. Theoretical studies revealed that the conductance increase is due to a significant decrease of the HOMO–LUMO gap and also the enhanced transmission close to the HOMO orbital when the radical forms. The large conductance enhancement induced by the formation of the stable PTZ radical molecule will lead to promising applications in single‐molecule electronics and spintronics. von Phenothiazinradikalen wurde mit der mechanisch kontrollierten Bruchkontaktmethode bestimmt. Ausgelöst durch ein saures Oxidationsmittel steigert das Radikalkation des Phenothiazins mit hoher Stabilität und Wahrscheinlichkeit der Kontaktbildung bei Raumtemperatur die Ladungstransporteigenschaft bis auf das 200‐Fache, was vielversprechende Anwendungen in der Einzelmolekülelektronik und Spintronik aufzeigt.
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abstractWe studied the single‐molecule conductance through an acid oxidant triggered phenothiazine (PTZ‐) based radical junction using the mechanically controllable break junction technique. The electrical conductance of the radical state was enhanced by up to 200 times compared to the neutral state, with high stability lasting for at least two months and high junction formation probability at room‐temperature. Theoretical studies revealed that the conductance increase is due to a significant decrease of the HOMO–LUMO gap and also the enhanced transmission close to the HOMO orbital when the radical forms. The large conductance enhancement induced by the formation of the stable PTZ radical molecule will lead to promising applications in single‐molecule electronics and spintronics. von Phenothiazinradikalen wurde mit der mechanisch kontrollierten Bruchkontaktmethode bestimmt. Ausgelöst durch ein saures Oxidationsmittel steigert das Radikalkation des Phenothiazins mit hoher Stabilität und Wahrscheinlichkeit der Kontaktbildung bei Raumtemperatur die Ladungstransporteigenschaft bis auf das 200‐Fache, was vielversprechende Anwendungen in der Einzelmolekülelektronik und Spintronik aufzeigt.
doi10.1002/ange.201707710
pages13241-13245
date2017-10-09