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Silicon Wafers with Facet‐Dependent Electrical Conductivity Properties

By breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied vol... Full description

Journal Title: Angewandte Chemie 27 November 2017, Vol.129(48), pp.15541-15545
Main Author: Tan, Chih‐Shan
Other Authors: Hsieh, Pei‐Lun , Chen, Lih‐Juann , Huang, Michael H.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0044-8249 ; E-ISSN: 1521-3757 ; DOI: 10.1002/ange.201709020
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recordid: wj10.1002/ange.201709020
title: Silicon Wafers with Facet‐Dependent Electrical Conductivity Properties
format: Article
creator:
  • Tan, Chih‐Shan
  • Hsieh, Pei‐Lun
  • Chen, Lih‐Juann
  • Huang, Michael H.
subjects:
  • Bandverbiegung
  • Elektrische Leitfähigkeit
  • Feldeffekttransistoren
  • Flächenabhängige Eigenschaften
  • Silicium
ispartof: Angewandte Chemie, 27 November 2017, Vol.129(48), pp.15541-15545
description: By breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied voltages, as expected, the Si {112} surface is highly conductive and Si {111} surface also shows good conductivity. Asymmetrical – curves have been recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations because of different degrees of conduction band bending at these crystal surfaces presenting different barrier heights to current flow. In particular, the {111}/{110} and {112}/{110} facet combinations give – curves resembling those of p–n junctions, suggesting a novel field effect transistor design is possible capitalizing on the pronounced facet‐dependent electrical conductivity properties of silicon. : Wolframsonden wurden an einen Si‐Wafer kontaktiert und zur Messung der flächenabhängigen elektrischen Leitfähigkeit von Si‐Kristallen genutzt. Für die Flächenkombinationen {111}/{112}, {111}/{110} und {112}/{110} wurden unsymmetrische ‐‐Kurven erhalten. Diese intrinsischen flächenabhängigen Effekte beim Silicium könnten für ein neuartiges Feldeffekttransistordesign genutzt werden.
language: eng
source:
identifier: ISSN: 0044-8249 ; E-ISSN: 1521-3757 ; DOI: 10.1002/ange.201709020
fulltext: fulltext
issn:
  • 0044-8249
  • 00448249
  • 1521-3757
  • 15213757
url: Link


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titleSilicon Wafers with Facet‐Dependent Electrical Conductivity Properties
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subjectBandverbiegung ; Elektrische Leitfähigkeit ; Feldeffekttransistoren ; Flächenabhängige Eigenschaften ; Silicium
descriptionBy breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied voltages, as expected, the Si {112} surface is highly conductive and Si {111} surface also shows good conductivity. Asymmetrical – curves have been recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations because of different degrees of conduction band bending at these crystal surfaces presenting different barrier heights to current flow. In particular, the {111}/{110} and {112}/{110} facet combinations give – curves resembling those of p–n junctions, suggesting a novel field effect transistor design is possible capitalizing on the pronounced facet‐dependent electrical conductivity properties of silicon. : Wolframsonden wurden an einen Si‐Wafer kontaktiert und zur Messung der flächenabhängigen elektrischen Leitfähigkeit von Si‐Kristallen genutzt. Für die Flächenkombinationen {111}/{112}, {111}/{110} und {112}/{110} wurden unsymmetrische ‐‐Kurven erhalten. Diese intrinsischen flächenabhängigen Effekte beim Silicium könnten für ein neuartiges Feldeffekttransistordesign genutzt werden.
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descriptionBy breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied voltages, as expected, the Si {112} surface is highly conductive and Si {111} surface also shows good conductivity. Asymmetrical – curves have been recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations because of different degrees of conduction band bending at these crystal surfaces presenting different barrier heights to current flow. In particular, the {111}/{110} and {112}/{110} facet combinations give – curves resembling those of p–n junctions, suggesting a novel field effect transistor design is possible capitalizing on the pronounced facet‐dependent electrical conductivity properties of silicon. : Wolframsonden wurden an einen Si‐Wafer kontaktiert und zur Messung der flächenabhängigen elektrischen Leitfähigkeit von Si‐Kristallen genutzt. Für die Flächenkombinationen {111}/{112}, {111}/{110} und {112}/{110} wurden unsymmetrische ‐‐Kurven erhalten. Diese intrinsischen flächenabhängigen Effekte beim Silicium könnten für ein neuartiges Feldeffekttransistordesign genutzt werden.
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abstractBy breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied voltages, as expected, the Si {112} surface is highly conductive and Si {111} surface also shows good conductivity. Asymmetrical – curves have been recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations because of different degrees of conduction band bending at these crystal surfaces presenting different barrier heights to current flow. In particular, the {111}/{110} and {112}/{110} facet combinations give – curves resembling those of p–n junctions, suggesting a novel field effect transistor design is possible capitalizing on the pronounced facet‐dependent electrical conductivity properties of silicon. : Wolframsonden wurden an einen Si‐Wafer kontaktiert und zur Messung der flächenabhängigen elektrischen Leitfähigkeit von Si‐Kristallen genutzt. Für die Flächenkombinationen {111}/{112}, {111}/{110} und {112}/{110} wurden unsymmetrische ‐‐Kurven erhalten. Diese intrinsischen flächenabhängigen Effekte beim Silicium könnten für ein neuartiges Feldeffekttransistordesign genutzt werden.
doi10.1002/ange.201709020
pages15541-15545
date2017-11-27