schliessen

Filtern

 

Bibliotheken

Germanium Wafers Possessing Facet‐Dependent Electrical Conductivity Properties

Electrical conductivity properties of Ge {100}, {110}, {111}, and {211} facets have been measured by breaking Ge (100) and (111) wafers to expose {110} and {211} surfaces and contacting the different facets with tungsten probes. Ge {111} and {211} faces are far more conductive than the already condu... Full description

Journal Title: Angewandte Chemie 03 December 2018, Vol.130(49), pp.16394-16397
Main Author: Hsieh, Pei‐Lun
Other Authors: Lee, An‐Ting , Chen, Lih‐Juann , Huang, Michael H.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0044-8249 ; E-ISSN: 1521-3757 ; DOI: 10.1002/ange.201809132
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: wj10.1002/ange.201809132
title: Germanium Wafers Possessing Facet‐Dependent Electrical Conductivity Properties
format: Article
creator:
  • Hsieh, Pei‐Lun
  • Lee, An‐Ting
  • Chen, Lih‐Juann
  • Huang, Michael H.
subjects:
  • Bandstrukturen
  • Elektrische Leitfähigkeit
  • Facettenabhängige Eigenschaften
  • Feldeffekttransistoren
  • Germanium
ispartof: Angewandte Chemie, 03 December 2018, Vol.130(49), pp.16394-16397
description: Electrical conductivity properties of Ge {100}, {110}, {111}, and {211} facets have been measured by breaking Ge (100) and (111) wafers to expose {110} and {211} surfaces and contacting the different facets with tungsten probes. Ge {111} and {211} faces are far more conductive than the already conductive Ge {100} and {110} faces, matching with recent density functional theory (DFT) predictions. Asymmetric – curves resembling those of ‐ junctions have been collected for the {110}/{111} and {110}/{211} facet combinations. The current‐rectifying effects stem from different degrees of surface band bending for the highly and less conductive faces and the direction of current flow. This work demonstrates that germanium wafers also possess facet‐dependent electrical conductivity responses that can be utilized in the fabrication of novel fin field‐effect transistors (finFET). : Wolframsonden werden verwendet, um Kontakte zu den {100}‐, {110}‐, {111}‐ und {211}‐Oberflächen von Ge‐Wafern herzustellen. So werden die facettenabhängigen elektrischen Leitfähigkeitseigenschaften von Ge aufgezeigt. Darüber hinaus werden asymmetrische ‐‐Kurven für die Facettenkombinationen {110}/{111} und {110}/{211} beobachtet, was darauf hindeutet, dass ein neuartiges Feldeffekttransistor‐Design möglich ist.
language: eng
source:
identifier: ISSN: 0044-8249 ; E-ISSN: 1521-3757 ; DOI: 10.1002/ange.201809132
fulltext: fulltext
issn:
  • 0044-8249
  • 00448249
  • 1521-3757
  • 15213757
url: Link


@attributes
ID725362223
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid10.1002/ange.201809132
sourceidwj
recordidTN_wj10.1002/ange.201809132
sourcesystemOther
pqid2137440292
galeid563383417
display
typearticle
titleGermanium Wafers Possessing Facet‐Dependent Electrical Conductivity Properties
creatorHsieh, Pei‐Lun ; Lee, An‐Ting ; Chen, Lih‐Juann ; Huang, Michael H.
ispartofAngewandte Chemie, 03 December 2018, Vol.130(49), pp.16394-16397
identifier
subjectBandstrukturen ; Elektrische Leitfähigkeit ; Facettenabhängige Eigenschaften ; Feldeffekttransistoren ; Germanium
descriptionElectrical conductivity properties of Ge {100}, {110}, {111}, and {211} facets have been measured by breaking Ge (100) and (111) wafers to expose {110} and {211} surfaces and contacting the different facets with tungsten probes. Ge {111} and {211} faces are far more conductive than the already conductive Ge {100} and {110} faces, matching with recent density functional theory (DFT) predictions. Asymmetric – curves resembling those of ‐ junctions have been collected for the {110}/{111} and {110}/{211} facet combinations. The current‐rectifying effects stem from different degrees of surface band bending for the highly and less conductive faces and the direction of current flow. This work demonstrates that germanium wafers also possess facet‐dependent electrical conductivity responses that can be utilized in the fabrication of novel fin field‐effect transistors (finFET). : Wolframsonden werden verwendet, um Kontakte zu den {100}‐, {110}‐, {111}‐ und {211}‐Oberflächen von Ge‐Wafern herzustellen. So werden die facettenabhängigen elektrischen Leitfähigkeitseigenschaften von Ge aufgezeigt. Darüber hinaus werden asymmetrische ‐‐Kurven für die Facettenkombinationen {110}/{111} und {110}/{211} beobachtet, was darauf hindeutet, dass ein neuartiges Feldeffekttransistor‐Design möglich ist.
languageeng
source
version5
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
search
creatorcontrib
0Hsieh, Pei‐Lun
1Lee, An‐Ting
2Chen, Lih‐Juann
3Huang, Michael H.
titleGermanium Wafers Possessing Facet‐Dependent Electrical Conductivity Properties
descriptionElectrical conductivity properties of Ge {100}, {110}, {111}, and {211} facets have been measured by breaking Ge (100) and (111) wafers to expose {110} and {211} surfaces and contacting the different facets with tungsten probes. Ge {111} and {211} faces are far more conductive than the already conductive Ge {100} and {110} faces, matching with recent density functional theory (DFT) predictions. Asymmetric – curves resembling those of ‐ junctions have been collected for the {110}/{111} and {110}/{211} facet combinations. The current‐rectifying effects stem from different degrees of surface band bending for the highly and less conductive faces and the direction of current flow. This work demonstrates that germanium wafers also possess facet‐dependent electrical conductivity responses that can be utilized in the fabrication of novel fin field‐effect transistors (finFET). : Wolframsonden werden verwendet, um Kontakte zu den {100}‐, {110}‐, {111}‐ und {211}‐Oberflächen von Ge‐Wafern herzustellen. So werden die facettenabhängigen elektrischen Leitfähigkeitseigenschaften von Ge aufgezeigt. Darüber hinaus werden asymmetrische ‐‐Kurven für die Facettenkombinationen {110}/{111} und {110}/{211} beobachtet, was darauf hindeutet, dass ein neuartiges Feldeffekttransistor‐Design möglich ist.
subject
0Bandstrukturen
1Elektrische Leitfähigkeit
2Facettenabhängige Eigenschaften
3Feldeffekttransistoren
4Germanium
general
0English
110.1002/ange.201809132
2Wiley Online Library
sourceidwj
recordidwj10.1002/ange.201809132
issn
00044-8249
100448249
21521-3757
315213757
rsrctypearticle
creationdate2018
addtitle
0Angewandte Chemie
1Angew. Chem.
searchscope
0wj
1wiley
scope
0wj
1wiley
lsr30VSR-Enriched:[pages, pqid, galeid]
sort
titleGermanium Wafers Possessing Facet‐Dependent Electrical Conductivity Properties
authorHsieh, Pei‐Lun ; Lee, An‐Ting ; Chen, Lih‐Juann ; Huang, Michael H.
creationdate20181203
facets
frbrgroupid5202656806193985601
frbrtype5
newrecords20181205
languageeng
creationdate2018
topic
0Bandstrukturen
1Elektrische Leitfähigkeit
2Facettenabhängige Eigenschaften
3Feldeffekttransistoren
4Germanium
collectionWiley Online Library
prefilterarticles
rsrctypearticles
creatorcontrib
0Hsieh, Pei‐Lun
1Lee, An‐Ting
2Chen, Lih‐Juann
3Huang, Michael H.
jtitleAngewandte Chemie
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Hsieh
1Lee
2Chen
3Huang
aufirst
0Pei‐Lun
1An‐Ting
2Lih‐Juann
3Michael H.
au
0Hsieh, Pei‐Lun
1Lee, An‐Ting
2Chen, Lih‐Juann
3Huang, Michael H.
atitleGermanium Wafers Possessing Facet‐Dependent Electrical Conductivity Properties
jtitleAngewandte Chemie
risdate20181203
volume130
issue49
spage16394
epage16397
issn0044-8249
eissn1521-3757
genrearticle
ristypeJOUR
abstractElectrical conductivity properties of Ge {100}, {110}, {111}, and {211} facets have been measured by breaking Ge (100) and (111) wafers to expose {110} and {211} surfaces and contacting the different facets with tungsten probes. Ge {111} and {211} faces are far more conductive than the already conductive Ge {100} and {110} faces, matching with recent density functional theory (DFT) predictions. Asymmetric – curves resembling those of ‐ junctions have been collected for the {110}/{111} and {110}/{211} facet combinations. The current‐rectifying effects stem from different degrees of surface band bending for the highly and less conductive faces and the direction of current flow. This work demonstrates that germanium wafers also possess facet‐dependent electrical conductivity responses that can be utilized in the fabrication of novel fin field‐effect transistors (finFET). : Wolframsonden werden verwendet, um Kontakte zu den {100}‐, {110}‐, {111}‐ und {211}‐Oberflächen von Ge‐Wafern herzustellen. So werden die facettenabhängigen elektrischen Leitfähigkeitseigenschaften von Ge aufgezeigt. Darüber hinaus werden asymmetrische ‐‐Kurven für die Facettenkombinationen {110}/{111} und {110}/{211} beobachtet, was darauf hindeutet, dass ein neuartiges Feldeffekttransistor‐Design möglich ist.
doi10.1002/ange.201809132
pages16394-16397
date2018-12-03