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The Effect of Exciton‐Delocalizing Thiols on Intrinsic Dual Emitting Semiconductor Nanocrystals

The emissive properties of thiol‐capped CdSe nanocrystals (NCs) with intrinsic dual emission are investigated through temperature‐dependent photoluminescence (PL) measurements. We demonstrate the influence of thiols on the relative PL intensities of the core and surface emissive states, as well as o... Full description

Journal Title: ChemPhysChem 03 March 2016, Vol.17(5), pp.665-669
Main Author: Jethi, Lakshay
Other Authors: Mack, Timothy G. , Krause, Michael M. , Drake, Sebastian , Kambhampati, Patanjali
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 1439-4235 ; E-ISSN: 1439-7641 ; DOI: 10.1002/cphc.201501049
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recordid: wj10.1002/cphc.201501049
title: The Effect of Exciton‐Delocalizing Thiols on Intrinsic Dual Emitting Semiconductor Nanocrystals
format: Article
creator:
  • Jethi, Lakshay
  • Mack, Timothy G.
  • Krause, Michael M.
  • Drake, Sebastian
  • Kambhampati, Patanjali
subjects:
  • Ligands
  • Nanocrystals
  • Quantum Dots
  • Semiconductors
  • Thiols
ispartof: ChemPhysChem, 03 March 2016, Vol.17(5), pp.665-669
description: The emissive properties of thiol‐capped CdSe nanocrystals (NCs) with intrinsic dual emission are investigated through temperature‐dependent photoluminescence (PL) measurements. We demonstrate the influence of thiols on the relative PL intensities of the core and surface emissive states, as well as on the observed Stokes shifts. A redshift of both the core and surface PL in comparison with phosphonate‐capped NCs is consistent with recent work exploring the effect of thiols as excitonic hole‐delocalizing ligands. This observation is consistent with prior reports suggesting that surface excitons originate from electrons bound to cadmium trap states. : The temperature‐dependent emissive properties of thiol‐capped dual emitting CdSe nanocrystals are studied. Based on relative differences in their steric bulk and electronic properties, three distinct thiols were chosen (see picture) and the influence of the thiols on the relative PL intensities of the core and surface emissive states and on the observed Stokes shifts were revealed.
language: eng
source:
identifier: ISSN: 1439-4235 ; E-ISSN: 1439-7641 ; DOI: 10.1002/cphc.201501049
fulltext: fulltext
issn:
  • 1439-4235
  • 14394235
  • 1439-7641
  • 14397641
url: Link


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titleThe Effect of Exciton‐Delocalizing Thiols on Intrinsic Dual Emitting Semiconductor Nanocrystals
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subjectLigands ; Nanocrystals ; Quantum Dots ; Semiconductors ; Thiols
descriptionThe emissive properties of thiol‐capped CdSe nanocrystals (NCs) with intrinsic dual emission are investigated through temperature‐dependent photoluminescence (PL) measurements. We demonstrate the influence of thiols on the relative PL intensities of the core and surface emissive states, as well as on the observed Stokes shifts. A redshift of both the core and surface PL in comparison with phosphonate‐capped NCs is consistent with recent work exploring the effect of thiols as excitonic hole‐delocalizing ligands. This observation is consistent with prior reports suggesting that surface excitons originate from electrons bound to cadmium trap states. : The temperature‐dependent emissive properties of thiol‐capped dual emitting CdSe nanocrystals are studied. Based on relative differences in their steric bulk and electronic properties, three distinct thiols were chosen (see picture) and the influence of the thiols on the relative PL intensities of the core and surface emissive states and on the observed Stokes shifts were revealed.
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titleThe Effect of Exciton‐Delocalizing Thiols on Intrinsic Dual Emitting Semiconductor Nanocrystals
descriptionThe emissive properties of thiol‐capped CdSe nanocrystals (NCs) with intrinsic dual emission are investigated through temperature‐dependent photoluminescence (PL) measurements. We demonstrate the influence of thiols on the relative PL intensities of the core and surface emissive states, as well as on the observed Stokes shifts. A redshift of both the core and surface PL in comparison with phosphonate‐capped NCs is consistent with recent work exploring the effect of thiols as excitonic hole‐delocalizing ligands. This observation is consistent with prior reports suggesting that surface excitons originate from electrons bound to cadmium trap states. : The temperature‐dependent emissive properties of thiol‐capped dual emitting CdSe nanocrystals are studied. Based on relative differences in their steric bulk and electronic properties, three distinct thiols were chosen (see picture) and the influence of the thiols on the relative PL intensities of the core and surface emissive states and on the observed Stokes shifts were revealed.
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abstractThe emissive properties of thiol‐capped CdSe nanocrystals (NCs) with intrinsic dual emission are investigated through temperature‐dependent photoluminescence (PL) measurements. We demonstrate the influence of thiols on the relative PL intensities of the core and surface emissive states, as well as on the observed Stokes shifts. A redshift of both the core and surface PL in comparison with phosphonate‐capped NCs is consistent with recent work exploring the effect of thiols as excitonic hole‐delocalizing ligands. This observation is consistent with prior reports suggesting that surface excitons originate from electrons bound to cadmium trap states. : The temperature‐dependent emissive properties of thiol‐capped dual emitting CdSe nanocrystals are studied. Based on relative differences in their steric bulk and electronic properties, three distinct thiols were chosen (see picture) and the influence of the thiols on the relative PL intensities of the core and surface emissive states and on the observed Stokes shifts were revealed.
doi10.1002/cphc.201501049
pages665-669
date2016-03-03
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