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In‐situ Raman spectroscopy of current‐carrying graphene microbridge

Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 10 A/cm in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but t... Full description

Journal Title: Journal of Raman Spectroscopy February 2014, Vol.45(2), pp.168-172
Main Author: Choi, Minkyung
Other Authors: Son, Jangyup , Choi, Heechae , Shin, Hyun‐Joon , Lee, Sangho , Kim, Sanghoon , Lee, Soogil , Kim, Seungchul , Lee, Kwang‐Ryeol , Kim, Sang Jin , Hong, Byung Hee , Hong, Jongill , Yang, In‐Sang
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ID: ISSN: 0377-0486 ; E-ISSN: 1097-4555 ; DOI: 10.1002/jrs.4442
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recordid: wj10.1002/jrs.4442
title: In‐situ Raman spectroscopy of current‐carrying graphene microbridge
format: Article
creator:
  • Choi, Minkyung
  • Son, Jangyup
  • Choi, Heechae
  • Shin, Hyun‐Joon
  • Lee, Sangho
  • Kim, Sanghoon
  • Lee, Soogil
  • Kim, Seungchul
  • Lee, Kwang‐Ryeol
  • Kim, Sang Jin
  • Hong, Byung Hee
  • Hong, Jongill
  • Yang, In‐Sang
subjects:
  • Raman Spectroscopy
  • Graphene
  • Joule Heating
  • Doping
ispartof: Journal of Raman Spectroscopy, February 2014, Vol.45(2), pp.168-172
description: Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 10 A/cm in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up‐shift of the G peak and the G′ peak, after switching off the electrical current, is believed to be due to p‐doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C–O and C=O bond components in the C1 spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p‐doping according to our density functional theory calculation of the electronic structure. Copyright © 2014 John Wiley & Sons, Ltd. Fig. G and G' peak shifts at various current densities on (on) and right after off (off). We investigated the effects of electrical current on the graphene device under ambient condition by Raman spectroscopy. The up‐shifts of G and G' peaks of the Raman spectra after the electrical current is switched off indicate the p‐doping of graphene. X‐ray photoemission microscopy supports that the p‐doping is due to the adsorption of oxygen.
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identifier: ISSN: 0377-0486 ; E-ISSN: 1097-4555 ; DOI: 10.1002/jrs.4442
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issn:
  • 0377-0486
  • 03770486
  • 1097-4555
  • 10974555
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titleIn‐situ Raman spectroscopy of current‐carrying graphene microbridge
creatorChoi, Minkyung ; Son, Jangyup ; Choi, Heechae ; Shin, Hyun‐Joon ; Lee, Sangho ; Kim, Sanghoon ; Lee, Soogil ; Kim, Seungchul ; Lee, Kwang‐Ryeol ; Kim, Sang Jin ; Hong, Byung Hee ; Hong, Jongill ; Yang, In‐Sang
ispartofJournal of Raman Spectroscopy, February 2014, Vol.45(2), pp.168-172
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subjectRaman Spectroscopy ; Graphene ; Joule Heating ; Doping
descriptionRaman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 10 A/cm in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up‐shift of the G peak and the G′ peak, after switching off the electrical current, is believed to be due to p‐doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C–O and C=O bond components in the C1 spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p‐doping according to our density functional theory calculation of the electronic structure. Copyright © 2014 John Wiley & Sons, Ltd. Fig. G and G' peak shifts at various current densities on (on) and right after off (off). We investigated the effects of electrical current on the graphene device under ambient condition by Raman spectroscopy. The up‐shifts of G and G' peaks of the Raman spectra after the electrical current is switched off indicate the p‐doping of graphene. X‐ray photoemission microscopy supports that the p‐doping is due to the adsorption of oxygen.
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titleIn‐situ Raman spectroscopy of current‐carrying graphene microbridge
descriptionRaman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 10 A/cm in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up‐shift of the G peak and the G′ peak, after switching off the electrical current, is believed to be due to p‐doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C–O and C=O bond components in the C1 spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p‐doping according to our density functional theory calculation of the electronic structure. Copyright © 2014 John Wiley & Sons, Ltd. Fig. G and G' peak shifts at various current densities on (on) and right after off (off). We investigated the effects of electrical current on the graphene device under ambient condition by Raman spectroscopy. The up‐shifts of G and G' peaks of the Raman spectra after the electrical current is switched off indicate the p‐doping of graphene. X‐ray photoemission microscopy supports that the p‐doping is due to the adsorption of oxygen.
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abstractRaman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 10 A/cm in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up‐shift of the G peak and the G′ peak, after switching off the electrical current, is believed to be due to p‐doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C–O and C=O bond components in the C1 spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p‐doping according to our density functional theory calculation of the electronic structure. Copyright © 2014 John Wiley & Sons, Ltd. Fig. G and G' peak shifts at various current densities on (on) and right after off (off). We investigated the effects of electrical current on the graphene device under ambient condition by Raman spectroscopy. The up‐shifts of G and G' peaks of the Raman spectra after the electrical current is switched off indicate the p‐doping of graphene. X‐ray photoemission microscopy supports that the p‐doping is due to the adsorption of oxygen.
doi10.1002/jrs.4442
pages168-172
date2014-02