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Raman study on the effects of annealing atmosphere of patterned graphene

Despite extensive research on graphene, there are still lacks of understanding the structural changes under harsh stress environments such as high current in uncontrolled atmosphere. Investigating the structural changes of graphene patterned into device at high temperature would be important as the... Full description

Journal Title: Journal of Raman Spectroscopy January 2018, Vol.49(1), pp.183-188
Main Author: Son, Jangyup
Other Authors: Choi, Minkyung , Hong, Jongill , Yang, In‐Sang
Format: Electronic Article Electronic Article
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ID: ISSN: 0377-0486 ; E-ISSN: 1097-4555 ; DOI: 10.1002/jrs.5280
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recordid: wj10.1002/jrs.5280
title: Raman study on the effects of annealing atmosphere of patterned graphene
format: Article
creator:
  • Son, Jangyup
  • Choi, Minkyung
  • Hong, Jongill
  • Yang, In‐Sang
subjects:
  • Patterned Graphene
  • Annealing Effect
  • Deformation
  • Defects
  • Voids
ispartof: Journal of Raman Spectroscopy, January 2018, Vol.49(1), pp.183-188
description: Despite extensive research on graphene, there are still lacks of understanding the structural changes under harsh stress environments such as high current in uncontrolled atmosphere. Investigating the structural changes of graphene patterned into device at high temperature would be important as the electrical current path of graphene becomes narrower and thus stronger in heat dissipation. In this paper, we performed a comparative study of the structural and electronical changes of graphene for as‐grown graphene and patterned graphene in a microbridge shape heated up to 500 °C in air or Ar. While the as‐grown graphene heated in air or Ar was nearly free from the structural changes, the microbridge graphene exhibited strong structural changes after annealing in Ar, i.e. the broadening in the G and the 2D peaks remained even after cooling back to 30 °C. On the other hand, the microbridge graphene heated in air was observed to release stress probably due to formation of vacancies by oxygen adsorption. The different behavior of microbridge graphene heated in Ar from that of as‐grown graphene in the same condition is obvious. This means that graphene in microscopic devices should be treated differently from the as‐grown graphene. Copyright © 2017 John Wiley & Sons, Ltd. We performed a comparative study of the structural and electronical changes of the two‐different types of graphene; as‐grown and patterned graphene annealed in air or Ar up to 500 °C. The Raman spectra of patterned graphene after annealing (top spectra) in air or in Ar are clearly different from each other. Such difference is not so apparent for the as‐grown graphene.
language:
source:
identifier: ISSN: 0377-0486 ; E-ISSN: 1097-4555 ; DOI: 10.1002/jrs.5280
fulltext: fulltext
issn:
  • 0377-0486
  • 03770486
  • 1097-4555
  • 10974555
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titleRaman study on the effects of annealing atmosphere of patterned graphene
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subjectPatterned Graphene ; Annealing Effect ; Deformation ; Defects ; Voids
descriptionDespite extensive research on graphene, there are still lacks of understanding the structural changes under harsh stress environments such as high current in uncontrolled atmosphere. Investigating the structural changes of graphene patterned into device at high temperature would be important as the electrical current path of graphene becomes narrower and thus stronger in heat dissipation. In this paper, we performed a comparative study of the structural and electronical changes of graphene for as‐grown graphene and patterned graphene in a microbridge shape heated up to 500 °C in air or Ar. While the as‐grown graphene heated in air or Ar was nearly free from the structural changes, the microbridge graphene exhibited strong structural changes after annealing in Ar, i.e. the broadening in the G and the 2D peaks remained even after cooling back to 30 °C. On the other hand, the microbridge graphene heated in air was observed to release stress probably due to formation of vacancies by oxygen adsorption. The different behavior of microbridge graphene heated in Ar from that of as‐grown graphene in the same condition is obvious. This means that graphene in microscopic devices should be treated differently from the as‐grown graphene. Copyright © 2017 John Wiley & Sons, Ltd. We performed a comparative study of the structural and electronical changes of the two‐different types of graphene; as‐grown and patterned graphene annealed in air or Ar up to 500 °C. The Raman spectra of patterned graphene after annealing (top spectra) in air or in Ar are clearly different from each other. Such difference is not so apparent for the as‐grown graphene.
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titleRaman study on the effects of annealing atmosphere of patterned graphene
descriptionDespite extensive research on graphene, there are still lacks of understanding the structural changes under harsh stress environments such as high current in uncontrolled atmosphere. Investigating the structural changes of graphene patterned into device at high temperature would be important as the electrical current path of graphene becomes narrower and thus stronger in heat dissipation. In this paper, we performed a comparative study of the structural and electronical changes of graphene for as‐grown graphene and patterned graphene in a microbridge shape heated up to 500 °C in air or Ar. While the as‐grown graphene heated in air or Ar was nearly free from the structural changes, the microbridge graphene exhibited strong structural changes after annealing in Ar, i.e. the broadening in the G and the 2D peaks remained even after cooling back to 30 °C. On the other hand, the microbridge graphene heated in air was observed to release stress probably due to formation of vacancies by oxygen adsorption. The different behavior of microbridge graphene heated in Ar from that of as‐grown graphene in the same condition is obvious. This means that graphene in microscopic devices should be treated differently from the as‐grown graphene. Copyright © 2017 John Wiley & Sons, Ltd. We performed a comparative study of the structural and electronical changes of the two‐different types of graphene; as‐grown and patterned graphene annealed in air or Ar up to 500 °C. The Raman spectra of patterned graphene after annealing (top spectra) in air or in Ar are clearly different from each other. Such difference is not so apparent for the as‐grown graphene.
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abstractDespite extensive research on graphene, there are still lacks of understanding the structural changes under harsh stress environments such as high current in uncontrolled atmosphere. Investigating the structural changes of graphene patterned into device at high temperature would be important as the electrical current path of graphene becomes narrower and thus stronger in heat dissipation. In this paper, we performed a comparative study of the structural and electronical changes of graphene for as‐grown graphene and patterned graphene in a microbridge shape heated up to 500 °C in air or Ar. While the as‐grown graphene heated in air or Ar was nearly free from the structural changes, the microbridge graphene exhibited strong structural changes after annealing in Ar, i.e. the broadening in the G and the 2D peaks remained even after cooling back to 30 °C. On the other hand, the microbridge graphene heated in air was observed to release stress probably due to formation of vacancies by oxygen adsorption. The different behavior of microbridge graphene heated in Ar from that of as‐grown graphene in the same condition is obvious. This means that graphene in microscopic devices should be treated differently from the as‐grown graphene. Copyright © 2017 John Wiley & Sons, Ltd. We performed a comparative study of the structural and electronical changes of the two‐different types of graphene; as‐grown and patterned graphene annealed in air or Ar up to 500 °C. The Raman spectra of patterned graphene after annealing (top spectra) in air or in Ar are clearly different from each other. Such difference is not so apparent for the as‐grown graphene.
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