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Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride

To purchase or authenticate to the full-text of this article, please visit this link: http://onlinelibrary.wiley.com/doi/10.1002/pssb.201451384/abstract Byline: Stephan Engels, Bernat Terres, Felix Klein, Sven Reichardt, Matthias Goldsche, Sebastian Kuhlen, Kenji Watanabe, Takashi Taniguchi, Christo... Full description

Journal Title: physica status solidi (b) December 2014, Vol.251(12), pp.2545-2550
Main Author: Engels, Stephan
Other Authors: Terrés, Bernat , Klein, Felix , Reichardt, Sven , Goldsche, Matthias , Kuhlen, Sebastian , Watanabe, Kenji , Taniguchi, Takashi , Stampfer, Christoph
Format: Electronic Article Electronic Article
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ID: ISSN: 0370-1972 ; E-ISSN: 1521-3951 ; DOI: 10.1002/pssb.201451384
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recordid: wj10.1002/pssb.201451384
title: Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
format: Article
creator:
  • Engels, Stephan
  • Terrés, Bernat
  • Klein, Felix
  • Reichardt, Sven
  • Goldsche, Matthias
  • Kuhlen, Sebastian
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Stampfer, Christoph
subjects:
  • Bilayer
  • Graphene
  • Heterostructures
  • Hexagonal Boron Nitride
  • Raman Spectroscopy
ispartof: physica status solidi (b), December 2014, Vol.251(12), pp.2545-2550
description: To purchase or authenticate to the full-text of this article, please visit this link: http://onlinelibrary.wiley.com/doi/10.1002/pssb.201451384/abstract Byline: Stephan Engels, Bernat Terres, Felix Klein, Sven Reichardt, Matthias Goldsche, Sebastian Kuhlen, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer Keywords: bilayer; Graphene; heterostructures; hexagonal boron nitride; Raman spectroscopy We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions.
language:
source:
identifier: ISSN: 0370-1972 ; E-ISSN: 1521-3951 ; DOI: 10.1002/pssb.201451384
fulltext: fulltext
issn:
  • 0370-1972
  • 03701972
  • 1521-3951
  • 15213951
url: Link


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titleImpact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
creatorEngels, Stephan ; Terrés, Bernat ; Klein, Felix ; Reichardt, Sven ; Goldsche, Matthias ; Kuhlen, Sebastian ; Watanabe, Kenji ; Taniguchi, Takashi ; Stampfer, Christoph
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descriptionTo purchase or authenticate to the full-text of this article, please visit this link: http://onlinelibrary.wiley.com/doi/10.1002/pssb.201451384/abstract Byline: Stephan Engels, Bernat Terres, Felix Klein, Sven Reichardt, Matthias Goldsche, Sebastian Kuhlen, Kenji Watanabe, Takashi Taniguchi, Christoph Stampfer Keywords: bilayer; Graphene; heterostructures; hexagonal boron nitride; Raman spectroscopy We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall doping, and strain are not influenced by the annealing, an initial annealing step lowers doping and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and doping values from the correlation of the 2D-peak and the G-peak positions.
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