schliessen

Filtern

 

Bibliotheken

Ferroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current

Zinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they have a high density of intrinsically unfilled traps, and it is difficult to achieve p‐type doping, leading to the poor performance for... Full description

Journal Title: Small May 2018, Vol.14(22), pp.n/a-n/a
Main Author: Wang, Peng
Other Authors: Wang, Yang , Ye, Lei , Wu, Mingzai , Xie, Runzhang , Wang, Xudong , Chen, Xiaoshuang , Fan, Zhiyong , Wang, Jianlu , Hu, Weida
Format: Electronic Article Electronic Article
Language:
Subjects:
ID: ISSN: 1613-6810 ; E-ISSN: 1613-6829 ; DOI: 10.1002/smll.201800492
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: wj10.1002/smll.201800492
title: Ferroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current
format: Article
creator:
  • Wang, Peng
  • Wang, Yang
  • Ye, Lei
  • Wu, Mingzai
  • Xie, Runzhang
  • Wang, Xudong
  • Chen, Xiaoshuang
  • Fan, Zhiyong
  • Wang, Jianlu
  • Hu, Weida
subjects:
  • Dark Current
  • Detectivity
  • Ferroelectric Localized Field
  • Ultraviolet Photodetectors
  • Zinc Oxide Nanosheet
ispartof: Small, May 2018, Vol.14(22), pp.n/a-n/a
description: Zinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they have a high density of intrinsically unfilled traps, and it is difficult to achieve p‐type doping, leading to the poor performance for low light level switching ratio and a high dark current that limit practical applications in UV photodetection. Here, UV photodetectors based on ZnO nanosheets are demonstrated, whose performance is significantly improved by using a ferroelectric localized field. Specifically, the photodetectors have achieved a responsivity of up to 3.8 × 10 A W, a detectivity of 4.4 × 10 Jones, and a photocurrent gain up to 1.24 × 10. These device figures of merit are far beyond those of traditional ZnO ultraviolet photodetectors. In addition, the devices' initial dark current can be easily restored after continuous photocurrent measurement by using a positive gate voltage pulse. This study establishes a new approach to produce high‐sensitivity and low‐dark‐current ultraviolet photodetectors and presents a crucial step for further practical applications. are fabricated with ZnO nanosheet and poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)). The strong ferroelectric localized field can effectively deplete the intrinsic carriers of the channel; thus, the device is capable of low dark current without applying external gate voltage, resulting in high signal‐to‐noise ratio and low power consumption.
language:
source:
identifier: ISSN: 1613-6810 ; E-ISSN: 1613-6829 ; DOI: 10.1002/smll.201800492
fulltext: fulltext
issn:
  • 1613-6810
  • 16136810
  • 1613-6829
  • 16136829
url: Link


@attributes
ID291902201
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid10.1002/smll.201800492
sourceidwj
recordidTN_wj10.1002/smll.201800492
sourcesystemPC
pqid2033382024
galeid540949031
display
typearticle
titleFerroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current
creatorWang, Peng ; Wang, Yang ; Ye, Lei ; Wu, Mingzai ; Xie, Runzhang ; Wang, Xudong ; Chen, Xiaoshuang ; Fan, Zhiyong ; Wang, Jianlu ; Hu, Weida
ispartofSmall, May 2018, Vol.14(22), pp.n/a-n/a
identifier
subjectDark Current ; Detectivity ; Ferroelectric Localized Field ; Ultraviolet Photodetectors ; Zinc Oxide Nanosheet
descriptionZinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they have a high density of intrinsically unfilled traps, and it is difficult to achieve p‐type doping, leading to the poor performance for low light level switching ratio and a high dark current that limit practical applications in UV photodetection. Here, UV photodetectors based on ZnO nanosheets are demonstrated, whose performance is significantly improved by using a ferroelectric localized field. Specifically, the photodetectors have achieved a responsivity of up to 3.8 × 10 A W, a detectivity of 4.4 × 10 Jones, and a photocurrent gain up to 1.24 × 10. These device figures of merit are far beyond those of traditional ZnO ultraviolet photodetectors. In addition, the devices' initial dark current can be easily restored after continuous photocurrent measurement by using a positive gate voltage pulse. This study establishes a new approach to produce high‐sensitivity and low‐dark‐current ultraviolet photodetectors and presents a crucial step for further practical applications. are fabricated with ZnO nanosheet and poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)). The strong ferroelectric localized field can effectively deplete the intrinsic carriers of the channel; thus, the device is capable of low dark current without applying external gate voltage, resulting in high signal‐to‐noise ratio and low power consumption.
source
version7
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
search
creatorcontrib
0Wang, Peng
1Wang, Yang
2Ye, Lei
3Wu, Mingzai
4Xie, Runzhang
5Wang, Xudong
6Chen, Xiaoshuang
7Fan, Zhiyong
8Wang, Jianlu
9Hu, Weida
titleFerroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current
descriptionZinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they have a high density of intrinsically unfilled traps, and it is difficult to achieve p‐type doping, leading to the poor performance for low light level switching ratio and a high dark current that limit practical applications in UV photodetection. Here, UV photodetectors based on ZnO nanosheets are demonstrated, whose performance is significantly improved by using a ferroelectric localized field. Specifically, the photodetectors have achieved a responsivity of up to 3.8 × 10 A W, a detectivity of 4.4 × 10 Jones, and a photocurrent gain up to 1.24 × 10. These device figures of merit are far beyond those of traditional ZnO ultraviolet photodetectors. In addition, the devices' initial dark current can be easily restored after continuous photocurrent measurement by using a positive gate voltage pulse. This study establishes a new approach to produce high‐sensitivity and low‐dark‐current ultraviolet photodetectors and presents a crucial step for further practical applications. are fabricated with ZnO nanosheet and poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)). The strong ferroelectric localized field can effectively deplete the intrinsic carriers of the channel; thus, the device is capable of low dark current without applying external gate voltage, resulting in high signal‐to‐noise ratio and low power consumption.
subject
0Dark Current
1Detectivity
2Ferroelectric Localized Field
3Ultraviolet Photodetectors
4Zinc Oxide Nanosheet
general
010.1002/smll.201800492
1Wiley Online Library
sourceidwj
recordidwj10.1002/smll.201800492
issn
01613-6810
116136810
21613-6829
316136829
rsrctypearticle
creationdate2018
addtitleSmall
searchscope
0wj
1wiley
scope
0wj
1wiley
lsr30VSR-Enriched:[galeid, pages, pqid]
sort
titleFerroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current
authorWang, Peng ; Wang, Yang ; Ye, Lei ; Wu, Mingzai ; Xie, Runzhang ; Wang, Xudong ; Chen, Xiaoshuang ; Fan, Zhiyong ; Wang, Jianlu ; Hu, Weida
creationdate20180500
facets
frbrgroupid-121759565930919599
frbrtype5
newrecords20180606
creationdate2018
topic
0Dark Current
1Detectivity
2Ferroelectric Localized Field
3Ultraviolet Photodetectors
4Zinc Oxide Nanosheet
collectionWiley Online Library
prefilterarticles
rsrctypearticles
creatorcontrib
0Wang, Peng
1Wang, Yang
2Ye, Lei
3Wu, Mingzai
4Xie, Runzhang
5Wang, Xudong
6Chen, Xiaoshuang
7Fan, Zhiyong
8Wang, Jianlu
9Hu, Weida
jtitleSmall
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Wang
1Ye
2Wu
3Xie
4Chen
5Fan
6Hu
aufirst
0Peng
1Yang
2Lei
3Mingzai
4Runzhang
5Xudong
6Xiaoshuang
7Zhiyong
8Jianlu
9Weida
au
0Wang, Peng
1Wang, Yang
2Ye, Lei
3Wu, Mingzai
4Xie, Runzhang
5Wang, Xudong
6Chen, Xiaoshuang
7Fan, Zhiyong
8Wang, Jianlu
9Hu, Weida
atitleFerroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current
jtitleSmall
risdate201805
volume14
issue22
spagen/a
epagen/a
issn1613-6810
eissn1613-6829
genrearticle
ristypeJOUR
abstractZinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they have a high density of intrinsically unfilled traps, and it is difficult to achieve p‐type doping, leading to the poor performance for low light level switching ratio and a high dark current that limit practical applications in UV photodetection. Here, UV photodetectors based on ZnO nanosheets are demonstrated, whose performance is significantly improved by using a ferroelectric localized field. Specifically, the photodetectors have achieved a responsivity of up to 3.8 × 10 A W, a detectivity of 4.4 × 10 Jones, and a photocurrent gain up to 1.24 × 10. These device figures of merit are far beyond those of traditional ZnO ultraviolet photodetectors. In addition, the devices' initial dark current can be easily restored after continuous photocurrent measurement by using a positive gate voltage pulse. This study establishes a new approach to produce high‐sensitivity and low‐dark‐current ultraviolet photodetectors and presents a crucial step for further practical applications. are fabricated with ZnO nanosheet and poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)). The strong ferroelectric localized field can effectively deplete the intrinsic carriers of the channel; thus, the device is capable of low dark current without applying external gate voltage, resulting in high signal‐to‐noise ratio and low power consumption.
doi10.1002/smll.201800492
pages1-7
date2018-05