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Improved Crystal Quality of Transparent Conductive Ga ‐doped ZnO Films by Magnesium Doping Through Radio‐Frequency Magnetron Sputtering Preparation

This study investigates the enhanced structural, and optoelectronic properties of transparent conductive ‐doped () thin films with a varied magnesium () composition of 2% and 8%, respectively. The X‐ray diffraction () measurements revealed that with an 8% composition shows a stronger (002) diffracti... Full description

Journal Title: Journal of the American Ceramic Society February 2014, Vol.97(2), pp.473-480
Main Author: Liu, Wei‐Sheng
Other Authors: Chen, Wei‐Ku , Wu, Shen‐Yu , Hsueh, Kuang‐Po
Format: Electronic Article Electronic Article
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ID: ISSN: 0002-7820 ; E-ISSN: 1551-2916 ; DOI: 10.1111/jace.12630
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recordid: wj10.1111/jace.12630
title: Improved Crystal Quality of Transparent Conductive Ga ‐doped ZnO Films by Magnesium Doping Through Radio‐Frequency Magnetron Sputtering Preparation
format: Article
creator:
  • Liu, Wei‐Sheng
  • Chen, Wei‐Ku
  • Wu, Shen‐Yu
  • Hsueh, Kuang‐Po
subjects:
  • Zinc Oxide
ispartof: Journal of the American Ceramic Society, February 2014, Vol.97(2), pp.473-480
description: This study investigates the enhanced structural, and optoelectronic properties of transparent conductive ‐doped () thin films with a varied magnesium () composition of 2% and 8%, respectively. The X‐ray diffraction () measurements revealed that with an 8% composition shows a stronger (002) diffraction intensity and narrower linewidth than that with a 2% composition. Improved crystallinity and enlarged grain size in the postgrowth thermal annealed thin films were also observed in and morphological measurements by atomic force microscopy. Photoluminescence measurements were conducted to investigate the improved thin‐film quality, and the oxygen vacancy signal was found to decrease with increased content, consistent with X‐ray photoelectron spectroscopy measurements. This study also shows high optical transmittance over 98%, and a low resistivity of 5.7 × 10 Ω·cm in ‐doped ( = 0.02) thin film, which indicates the highly promising candidate for use in optoelectronic devices.
language:
source:
identifier: ISSN: 0002-7820 ; E-ISSN: 1551-2916 ; DOI: 10.1111/jace.12630
fulltext: fulltext
issn:
  • 0002-7820
  • 00027820
  • 1551-2916
  • 15512916
url: Link


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titleImproved Crystal Quality of Transparent Conductive Ga ‐doped ZnO Films by Magnesium Doping Through Radio‐Frequency Magnetron Sputtering Preparation
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descriptionThis study investigates the enhanced structural, and optoelectronic properties of transparent conductive ‐doped () thin films with a varied magnesium () composition of 2% and 8%, respectively. The X‐ray diffraction () measurements revealed that with an 8% composition shows a stronger (002) diffraction intensity and narrower linewidth than that with a 2% composition. Improved crystallinity and enlarged grain size in the postgrowth thermal annealed thin films were also observed in and morphological measurements by atomic force microscopy. Photoluminescence measurements were conducted to investigate the improved thin‐film quality, and the oxygen vacancy signal was found to decrease with increased content, consistent with X‐ray photoelectron spectroscopy measurements. This study also shows high optical transmittance over 98%, and a low resistivity of 5.7 × 10 Ω·cm in ‐doped ( = 0.02) thin film, which indicates the highly promising candidate for use in optoelectronic devices.
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titleImproved Crystal Quality of Transparent Conductive Ga ‐doped ZnO Films by Magnesium Doping Through Radio‐Frequency Magnetron Sputtering Preparation
descriptionThis study investigates the enhanced structural, and optoelectronic properties of transparent conductive ‐doped () thin films with a varied magnesium () composition of 2% and 8%, respectively. The X‐ray diffraction () measurements revealed that with an 8% composition shows a stronger (002) diffraction intensity and narrower linewidth than that with a 2% composition. Improved crystallinity and enlarged grain size in the postgrowth thermal annealed thin films were also observed in and morphological measurements by atomic force microscopy. Photoluminescence measurements were conducted to investigate the improved thin‐film quality, and the oxygen vacancy signal was found to decrease with increased content, consistent with X‐ray photoelectron spectroscopy measurements. This study also shows high optical transmittance over 98%, and a low resistivity of 5.7 × 10 Ω·cm in ‐doped ( = 0.02) thin film, which indicates the highly promising candidate for use in optoelectronic devices.
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abstractThis study investigates the enhanced structural, and optoelectronic properties of transparent conductive ‐doped () thin films with a varied magnesium () composition of 2% and 8%, respectively. The X‐ray diffraction () measurements revealed that with an 8% composition shows a stronger (002) diffraction intensity and narrower linewidth than that with a 2% composition. Improved crystallinity and enlarged grain size in the postgrowth thermal annealed thin films were also observed in and morphological measurements by atomic force microscopy. Photoluminescence measurements were conducted to investigate the improved thin‐film quality, and the oxygen vacancy signal was found to decrease with increased content, consistent with X‐ray photoelectron spectroscopy measurements. This study also shows high optical transmittance over 98%, and a low resistivity of 5.7 × 10 Ω·cm in ‐doped ( = 0.02) thin film, which indicates the highly promising candidate for use in optoelectronic devices.
doi10.1111/jace.12630
pages473-480
date2014-02