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Controllable Formation of the Crystalline Phases in Ge–Ga–S Chalcogenide Glass‐Ceramics

We prepared chemically stoichiometric, S‐poor and S‐rich Ge–Ga–S glasses and annealed them at a temperature that was 20°C higher than its respective glass transition temperature. We aimed at tuning the formation of the different crystals in chalcogenide glass‐ceramics. Through systematic characteriz... Full description

Journal Title: Journal of the American Ceramic Society January 2017, Vol.100(1), pp.74-80
Main Author: Yang, Xinyu
Other Authors: Zhang, Mingjie , Yan, Kunlun , Han, Liyuan , Xu, Qin , Liu, Haitao , Wang, Rongping
Format: Electronic Article Electronic Article
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ID: ISSN: 0002-7820 ; E-ISSN: 1551-2916 ; DOI: 10.1111/jace.14492
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recordid: wj10.1111/jace.14492
title: Controllable Formation of the Crystalline Phases in Ge–Ga–S Chalcogenide Glass‐Ceramics
format: Article
creator:
  • Yang, Xinyu
  • Zhang, Mingjie
  • Yan, Kunlun
  • Han, Liyuan
  • Xu, Qin
  • Liu, Haitao
  • Wang, Rongping
subjects:
  • Chalcogenides
  • Glass‐Ceramics
  • Crystals/Crystallization
  • X‐Ray Methods
  • Raman Spectroscopy
ispartof: Journal of the American Ceramic Society, January 2017, Vol.100(1), pp.74-80
description: We prepared chemically stoichiometric, S‐poor and S‐rich Ge–Ga–S glasses and annealed them at a temperature that was 20°C higher than its respective glass transition temperature. We aimed at tuning the formation of the different crystals in chalcogenide glass‐ceramics. Through systematic characterization of the structure using X‐ray diffraction and Raman scattering spectra, we found that, GeS and GeS crystals only can be created in S‐rich and S‐poor glass‐ceramics, respectively, while all GeS, GaS, and GeS crystals exist in chemically stoichiometric glass‐ceramics. Moreover, we demonstrated the homogeneous distribution of the crystals can be formed in the S‐rich glass‐ceramics from the surface to the interior via composition designing. The present approach blazes a new path to control the growth of the different crystals in chalcogenide glass‐ceramics.
language:
source:
identifier: ISSN: 0002-7820 ; E-ISSN: 1551-2916 ; DOI: 10.1111/jace.14492
fulltext: fulltext
issn:
  • 0002-7820
  • 00027820
  • 1551-2916
  • 15512916
url: Link


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titleControllable Formation of the Crystalline Phases in Ge–Ga–S Chalcogenide Glass‐Ceramics
creatorYang, Xinyu ; Zhang, Mingjie ; Yan, Kunlun ; Han, Liyuan ; Xu, Qin ; Liu, Haitao ; Wang, Rongping
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subjectChalcogenides ; Glass‐Ceramics ; Crystals/Crystallization ; X‐Ray Methods ; Raman Spectroscopy
descriptionWe prepared chemically stoichiometric, S‐poor and S‐rich Ge–Ga–S glasses and annealed them at a temperature that was 20°C higher than its respective glass transition temperature. We aimed at tuning the formation of the different crystals in chalcogenide glass‐ceramics. Through systematic characterization of the structure using X‐ray diffraction and Raman scattering spectra, we found that, GeS and GeS crystals only can be created in S‐rich and S‐poor glass‐ceramics, respectively, while all GeS, GaS, and GeS crystals exist in chemically stoichiometric glass‐ceramics. Moreover, we demonstrated the homogeneous distribution of the crystals can be formed in the S‐rich glass‐ceramics from the surface to the interior via composition designing. The present approach blazes a new path to control the growth of the different crystals in chalcogenide glass‐ceramics.
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titleControllable Formation of the Crystalline Phases in Ge–Ga–S Chalcogenide Glass‐Ceramics
descriptionWe prepared chemically stoichiometric, S‐poor and S‐rich Ge–Ga–S glasses and annealed them at a temperature that was 20°C higher than its respective glass transition temperature. We aimed at tuning the formation of the different crystals in chalcogenide glass‐ceramics. Through systematic characterization of the structure using X‐ray diffraction and Raman scattering spectra, we found that, GeS and GeS crystals only can be created in S‐rich and S‐poor glass‐ceramics, respectively, while all GeS, GaS, and GeS crystals exist in chemically stoichiometric glass‐ceramics. Moreover, we demonstrated the homogeneous distribution of the crystals can be formed in the S‐rich glass‐ceramics from the surface to the interior via composition designing. The present approach blazes a new path to control the growth of the different crystals in chalcogenide glass‐ceramics.
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titleControllable Formation of the Crystalline Phases in Ge–Ga–S Chalcogenide Glass‐Ceramics
authorYang, Xinyu ; Zhang, Mingjie ; Yan, Kunlun ; Han, Liyuan ; Xu, Qin ; Liu, Haitao ; Wang, Rongping
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abstractWe prepared chemically stoichiometric, S‐poor and S‐rich Ge–Ga–S glasses and annealed them at a temperature that was 20°C higher than its respective glass transition temperature. We aimed at tuning the formation of the different crystals in chalcogenide glass‐ceramics. Through systematic characterization of the structure using X‐ray diffraction and Raman scattering spectra, we found that, GeS and GeS crystals only can be created in S‐rich and S‐poor glass‐ceramics, respectively, while all GeS, GaS, and GeS crystals exist in chemically stoichiometric glass‐ceramics. Moreover, we demonstrated the homogeneous distribution of the crystals can be formed in the S‐rich glass‐ceramics from the surface to the interior via composition designing. The present approach blazes a new path to control the growth of the different crystals in chalcogenide glass‐ceramics.
doi10.1111/jace.14492
pages74-80
date2017-01