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Impurity-induced resonant Raman scattering in GaAs below the band gap at low temperature / Qing Huang

Acceptor-induced resonance Raman scattering (RRS) below the band gap in lightly doped p-type GaAs is investigated at 2 K. The Raman scattering intensities are measured and analyzed. Both impurity-induced one-phonon Raman scattering and multi-phonon scattering are verified and studied. For the one-ph... Full description

PPN (Catalogue-ID): 32095059X
Personen: Huang, Qing
Format: eBook eBook
Language: English
Sprache der Zusammenfassung: Englisch
Published: 2000
Edition: [Electronic ed.]
Hochschule: Göttingen, Univ., Diss., 2000
Basisklassifikation: 33.72
33.38
Formangabe: Hochschulschrift
Physical Description: 90 Bl. = 989 KB, text, images

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